首頁 >IXFK90N20Q>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXFK90N20Q | HiPerFET Power MOSFETs HiPerFET?PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifier ?Fastswitching ?Moldi | IXYS IXYS Corporation | IXYS | |
IXFK90N20Q | HiPerFETTM Power MOSFETs Q-CLASS | IXYS IXYS Corporation | IXYS | |
HiPerFET Power MOSFETs HiPerFET?PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifier ?Fastswitching ?Moldi | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A?? Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A?? Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=94A?? Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
HiPerFETTMPowerMOSFETsQ-CLASS | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsQ-CLASS | IXYS IXYS Corporation | IXYS |
詳細參數(shù)
- 型號:
IXFK90N20Q
- 功能描述:
MOSFET 200V 90A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
23+ |
TO-264 |
7810 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-264 |
32189 |
原裝正品 華強現(xiàn)貨 |
詢價 | ||
IXYS |
05+ |
原廠原裝 |
6146 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IXYS |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IXYS |
24+ |
TO-3PL |
2050 |
公司大量全新原裝 正品 隨時可以發(fā)貨 |
詢價 | ||
IXYS |
24+ |
TO-3PL |
1344 |
詢價 | |||
IXYS |
1931+ |
N/A |
113 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
IXYS |
1809+ |
TO-264 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-264 |
10000 |
公司只做原裝正品 |
詢價 | ||
IXYS |
22+ |
NA |
113 |
加我QQ或微信咨詢更多詳細信息, |
詢價 |
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