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IXFK73N30Q

HiPerFET Power MOSFETs Q-CLASS

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiv

IXYS

IXYS Corporation

IXFK73N30Q

HiPerFET Power MOSFETs Q-CLASS

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiv

IXYS

IXYS Corporation

IXFE73N30Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?Fastintrins

IXYS

IXYS Corporation

IXFK73N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=73A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK73N30

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN73N30

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN73N30Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Internationalstandar

IXYS

IXYS Corporation

IXFX73N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=73A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=42mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX73N30Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiv

IXYS

IXYS Corporation

IXFX73N30Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiv

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFK73N30Q

  • 功能描述：

    MOSFET 73 Amps 300V 0.042 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264AA(IXFK)
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS
23+
TO-3PL
5000
原裝正品,假一罰十
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
1377
詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
 詢價
IXYS/艾賽斯
23+
TO264
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
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更多IXFK73N30Q供應商 更新時間2024-12-27 16:21:00

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