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IXFK28N60

HiPerFET Power MOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?

IXYS

IXYS Corporation

IXFK28N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ28N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=260mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXGH28N60B

LowVIGBT

Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup

IXYS

IXYS Corporation

IXGT28N60B

LowVIGBT

Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup

IXYS

IXYS Corporation

SIHB28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHF28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHF28N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHF28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fo

VishayVishay Siliconix

威世科技威世科技半導體

SIHG28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IXFK28N60

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    HiPerFET Power MOSFETs

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
267
詢價
IXYS
1931+
N/A
29
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
23+
TOP3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
22+
NA
29
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
1828+
TOP3
9
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IXYS
2022+
TO-264-3,TO-264AA
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS
24+
TO-264
8866
詢價
更多IXFK28N60供應商 更新時間2025-4-15 9:00:00

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