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IXFK48N50Q

HiPer FET Power MOSFETs Q-CLASS

HiPerFET?PowerMOSFETsQ-CLASSSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQgHighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on)

IXYS

IXYS Corporation

IXFK48N50Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK48N50Q_03

HiPerFET Power MOSFETs Q-CLASS

IXYS

IXYS Corporation

IXFN48N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS?process UnclampedInductiveSwitching(UIS

IXYS

IXYS Corporation

IXFN48N50

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN48N50

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage -VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·Synchronousrectification ·Batterychargers ·Switched-modeandresonant-modepowersupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN48N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN48N50Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFN48N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Internationalst

IXYS

IXYS Corporation

IXFR48N50Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

IXFR48N50Q

HiPerFETPowerMOSFETsISOPLUS247,Q-Class

IXYS

IXYS Corporation

IXFX48N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX48N50Q

HiPerFETPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

SMOS48N50

PowerMOSFETs

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SMOS48N50

POWERMOSFETS

ETCList of Unclassifed Manufacturers

未分類制造商

詳細(xì)參數(shù)

  • 型號：

    IXFK48N50Q

  • 功能描述：

    MOSFET 48 Amps 500V 0.1 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264AA(IXFK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-264
40000
原裝正品 華強現(xiàn)貨
 詢價
IXYS
N/A
主營模塊
190
原裝正品,現(xiàn)貨供應(yīng)
 詢價
IXYS
17+
TO-3PL
6200
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
NA
19+
75786
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IXYS
23+
TO-3PL
4500
專做原裝正品,假一罰百!
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
269
詢價
IXYS
1931+
N/A
18
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 詢價
更多IXFK48N50Q供應(yīng)商 更新時間2025-1-14 14:13:00

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