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IXFH11N80

HiPerFET Power MOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH11N80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM11N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM11N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXTH11N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH11N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM11N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM11N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

SFF11N80

11AMP/800Volts0.95廓N-ChannelMOSFET

SSDI

Solid States Devices, Inc

SFF11N80B

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF11N80N

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF11N80P

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SIHA11N80AE

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA11N80E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA11N80E

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHB11N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?IntegratedZenerdiodeESDprotection ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB11N80E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB11N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHD11N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?IntegratedZenerdiodeESDprotection ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG11N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?IntegratedZenerdiodeESDprotection ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IXFH11N80

  • 功能描述:

    MOSFET 11 Amps 800V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
IXYS
24+
TO247
5000
只做原裝公司現(xiàn)貨
詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IXYS
16+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
IXYS/艾賽斯
21+
TO247
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
更多IXFH11N80供應(yīng)商 更新時(shí)間2024-12-26 10:12:00