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IRG4BC20KS

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforinterme

IRF

International Rectifier

IRG4BC20MDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermed

IRF

International Rectifier

IRG4BC20MDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20MD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para

IRF

International Rectifier

IRG4BC20SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio

IRF

International Rectifier

IRG4BC20SDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRF

International Rectifier

IRG4BC20SD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRF

International Rectifier

IRG4BC20SD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIOD

IRF

International Rectifier

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC20U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC20UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFRED?ultrafast, ultra-s

IRF

International Rectifier

IRG4BC20UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRG4BC20KS

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
Infineon Technologies
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實(shí)單
詢價(jià)
Infineon Technologies
23+
D2PAK
9000
原裝正品,支持實(shí)單
詢價(jià)
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
TO-263
7000
詢價(jià)
IR
2008+
5250
原裝正品長(zhǎng)期供貨,如假包賠包換 徐小姐13714450367
詢價(jià)
IR
13+
TO-263
9188
原裝分銷
詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IR
23+
原廠原裝
4000
全新原裝
詢價(jià)
更多IRG4BC20KS供應(yīng)商 更新時(shí)間2024-11-16 9:00:00