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IRG4BC20SPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4BC20SPBF

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 19A TO220AB

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC20SPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4BC20SPBFXKMA1

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 19A 60W TO220-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC20U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC20UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFRED?ultrafast, ultra-s

IRF

International Rectifier

IRG4BC20UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20UDPBF

ULTRAFASTCOPACKIGBT

IRF

International Rectifier

IRG4BC20UDPBF

UltraFastCoPackIGBT

Features ?UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20UDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera

IRF

International Rectifier

IRG4BC20UD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera

IRF

International Rectifier

IRG4BC20UD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterpara- meterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast,

IRF

International Rectifier

IRG4BC20UD-SPBF

ULTRAFASTCOPACKIGBT

IRF

International Rectifier

IRG4BC20UDSRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UDSTRRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UPBF

ULTRAFASTSPEEDIGBT

IRF

International Rectifier

IRG4BC20UPBF

UltraFastSpeedIGBT

Features ?UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generati

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IRG4BC20SPBF

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    1.6V @ 15V，10A

  • 開關(guān)能量：

    120μJ（開），2.05mJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    27ns/540ns

  • 測試條件：

    480V，10A，50 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220AB

  • 描述：

    IGBT 600V 19A TO220AB

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-220
1612
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
IR
2014+
100
公司原裝現(xiàn)貨常備庫存!
 詢價
IR
2020+
TO-220
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR
21+
TO-220
6000
原裝正品
 詢價
IR
2021+
TO-220
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-220AB
7750
全新原裝優(yōu)勢
 詢價
IR
24+
TO
625
詢價
IR
17+
TO-220
6200
100%原裝正品現(xiàn)貨
 詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
更多IRG4BC20SPBF供應(yīng)商 更新時間2025-1-3 17:07:00

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