首頁 >IRG4BC20MD>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4BC20MD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforinterme | IRF International Rectifier | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermed | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRF International Rectifier | IRF | ||
包裝:卷帶(TR) 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 18A 60W TO220AB | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A) Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A) Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIOD | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A) Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A) Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFRED?ultrafast, ultra-s | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRG4BC20MD
- 制造商:
IRF
- 制造商全稱:
International Rectifier
- 功能描述:
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
05+ |
原廠原裝 |
951 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
23+ |
TO-220AB |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
22+23+ |
TO-220 |
28695 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
2020+ |
TO-220AB |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
1923+ |
TO-220 |
6896 |
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價(jià) | ||
IR |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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