首頁(yè) >IRFI9Z34GPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFI9Z34GPBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFI9Z34GPBF | HEXFET POWER MOSFET | IRF International Rectifier | IRF | |
IRFI9Z34GPBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
HEXFETPowerMOSFET(-55V,0.1ohm,-14A) | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175oCOperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=-60V ?LowRDS(ON):0.106?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●175oCOperetingTemperature ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:-10μA(Max.)@VDS=-60V ●LowRDS(ON):0.106?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES νAvalancheRuggedTechnology νRuggedGateOxideTechnology νLowerInputCapacitance νImprovedGateCharge ν175°COperatingTemperature νExtendedSafeOperatingArea νLowerLeakageCurrent:10μA(Max.)@VDS=-60V νLowRDS(ON):0.106?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175oCOperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=-60V ?LowRDS(ON):0.106?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z34S,SiHF9Z34S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
IRFI9Z34GPBF
- 功能描述:
MOSFET P-Chan 60V 12 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-220-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
VISHAY |
21+ |
TO-220FP |
2000 |
原裝正品 有掛有貨 |
詢價(jià) | ||
VISHAY(威世) |
23+ |
TO-220 |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
VISHAY |
23+ |
TO220AB |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
VishayPCS |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Vishay PCS |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IOR |
2019+ |
TO-220 |
6000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
SOT-23 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
VISHAY(威世) |
2112+ |
TO-220(TO-220-3) |
105000 |
50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) |
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