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IRFIB6N60APBF

HEXFET Power MOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

IRFIB6N60APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KF6N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A

KECKEC CORPORATION

KEC株式會(huì)社

KF6N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A

KECKEC CORPORATION

KEC株式會(huì)社

KSM6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF6N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMI6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU6N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

MDF6N60

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

MDF6N60TH

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

MDP6N60

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

MDP6N60TH

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

MSF6N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MTB6N60

TMOSPOWERFET6.0AMPERES600VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswith

Motorola

Motorola, Inc

MTB6N60

TMOSPOWERFET6.0AMPERES600VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAK-SLStraightLead N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De

Motorola

Motorola, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    IRFIB6N60APBF

  • 功能描述:

    MOSFET N-Chan 600V 5.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多IRFIB6N60APBF供應(yīng)商 更新時(shí)間2024-10-26 22:59:00