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IRFD213

0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

HARRIS

Harris Corporation

IRFF213

RELDEFFECTPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

ISO213

Two-PortIsolated,LowProfileISOLATEDINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

ISO213P

Two-PortIsolated,LowProfileISOLATEDINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

KAQV213

6PIN250VN.OTYPESOLIDSTATERELAY-MOSFETOOUTPUT

Description TheKAQV213seriesisrobust,idealfortelecomandgroundfaultapplications.ItisaSPSTnormallyopenswitch(1FormA)thatreplaceselectromechanicalrelaysinmanyapplications.ItisconstructedusingaGaAlAsLEDforactuationcontrolandanintegratedmonolithicdieforthe

COSMO

COSMO Electronics Corporation

KAQV213A

6PIN250VN.OTYPESOLIDSTATERELAY-MOSFETOOUTPUT

Description TheKAQV213seriesisrobust,idealfortelecomandgroundfaultapplications.ItisaSPSTnormallyopenswitch(1FormA)thatreplaceselectromechanicalrelaysinmanyapplications.ItisconstructedusingaGaAlAsLEDforactuationcontrolandanintegratedmonolithicdieforthe

COSMO

COSMO Electronics Corporation

KAQV213A

PRODUCTSPECIFICATION

Description TheKAQV213seriesisrobust,idealfortelecomandgroundfaultapplications.ItisaSPSTnormallyopenswitch(1FormA)thatreplaceselectromechanicalrelaysinmanyapplications.ItisconstructedusingaGaAlAsLEDforactuationcontrolandanintegratedmonolithicdieforthe

COSMO

COSMO Electronics Corporation

KAQV213ATL

6PIN250VN.OTYPESOLIDSTATERELAY-MOSFETOUTPUT

COSMO

COSMO Electronics Corporation

KAQV213ATR

6PIN250VN.OTYPESOLIDSTATERELAY-MOSFETOUTPUT

COSMO

COSMO Electronics Corporation

KAQV213H

SOLIDSTATERELAY-MOSFETOUTPUT

Description TheKAQV213seriesisrobust,idealfortelecomandgroundfaultapplications.ItisaSPSTnormallyopenswitch(1FormA)thatreplaceselectromechanicalrelaysinmanyapplications.ItisconstructedusingaGaAlAsLEDforactuationcontrolandanintegratedmonolithicdieforthe

COSMO

COSMO Electronics Corporation

詳細參數(shù)

  • 型號:

    IRFD213

  • 功能描述:

    MOSFET N-Chan 200V 0.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
HEXDIP
19526
詢價
MOT
06+
原廠原裝
4227
只做全新原裝真實現(xiàn)貨供應
詢價
IR
24+
DIP-4
13500
詢價
SOLID
30
全新原裝 貨期兩周
詢價
MOT
23+
65480
詢價
VISHAY
1503+
DIP-4
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
IR-VISHAY
11+
DIP4
19298
原裝現(xiàn)貨
詢價
VISHAY/威世
23+
DIP-4
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
21+
DIP-4
10000
原裝現(xiàn)貨假一罰十
詢價
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
詢價
更多IRFD213供應商 更新時間2025-3-17 17:11:00