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首頁 >IRFE310>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFE310	文件：146.18 Kbytes Page：7 Pages	HEXFET TRANSISTOR 400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka	IRF International Rectifier	IRF
IRFE310	文件：173.28 Kbytes Page：7 Pages	Simple Drive Requirements	IRF International Rectifier	IRF
IRFE310_15	文件：173.28 Kbytes Page：7 Pages	Simple Drive Requirements	IRF International Rectifier	IRF
IRFF310	文件：326.13 Kbytes Page：7 Pages	1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET 1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs	Intersil Intersil Corporation	Intersil
IRFF310	文件：129.419 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea	IRF International Rectifier	IRF
IRFF310	文件：16.64 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF310	文件：1.00373 Mbytes Page：3 Pages	1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET 1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司	NJSEMI
IRFR310	文件：173.78 Kbytes Page：6 Pages	PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=1.7A)	IRF International Rectifier	IRF
IRFR310	文件：1.41713 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR310	文件：332.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFR310	文件：3.93235 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR310	文件：3.93309 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR310	文件：835 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR310,SiHFR310) ?Straightlead(IRFU310,SiHFU310) ?Availableintapeandreel ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR310A	文件：224.83 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):2.815?(Typ.)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFR310A	文件：321.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFR310B	文件：647.4 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFR310B	文件：674.94 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR310B	文件：321.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFR310PBF	文件：1.41713 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR310PBF	文件：1.80909 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=3.6廓,ID=1.7A)	IRF International Rectifier	IRF

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詳細參數(shù)

型號：
IRFE310
制造商：
International Rectifier
功能描述：
TRANS MOSFET N-CH 400V 1.25A 18PIN LCC - Bulk

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	IRFE310	IRF	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市航宇科工半導體有限公司	IRFE310	CHINA	22+	LCC-18	640	航宇科工半導體-央企合格優(yōu)秀供方!	詢價
深圳市河鋒鑫科技有限公司	IRFE310	IR	22+	18-pin LCC	6000	終端可免費供樣,支持BOM配單	詢價
深圳市安富世紀電子有限公司	IRFE310	IR	23+	18-pin LCC	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術有限公司	IRFE310	IR	23+	18-pin LCC	7000		詢價
深圳市宇集芯電子有限公司	IRFE330	IR	24+	N/A	90000	原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價格合理	詢價
深圳市鵬和科技有限公司	IRFE330	IR	24+		30	全新原裝	詢價
深圳市近平電子有限公司	IRFE330	IR	N/A	N/A	100	軍工品,原裝正品	詢價
深圳市星佑電子有限公司	IRFE330	IR	18+	原廠原裝假一賠十	30	原廠很遠現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠	詢價
深圳市佳鑫美電子科技有限公司	IRFE34N	IR	22+		6800	絕對原裝!真實庫存!	詢價

更多IRFE310供應商更新時間2024-10-25 16:11:00

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