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IRFE120

HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe

IRF

International Rectifier

IRFE120

Simple Drive Requirements

IRF

International Rectifier

IRFE120_07

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

IRF

International Rectifier

IRFE120_15

Simple Drive Requirements

IRF

International Rectifier

IRFF120

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF120

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

Description TheHEXFET?technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE

IRF

International Rectifier

IRFF120

N-ChannelEnhancement-ModePowerMOSField-EffectTransistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

IRFF120

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFM120A

IEEE802.3afCompatible

IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM120A

AvalancheRuggedTechnology

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    IRFE120

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 4.5A 18-Pin LLCC

  • 功能描述:

    TRANS MOSFET N-CH 100V 4.5A 18PIN LCC - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
專業(yè)軍工
LCC
860
只做原裝正品現(xiàn)貨授權(quán)貨源
詢價(jià)
IR
24+
LCC
66800
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
24+
SMD
50
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
詢價(jià)
IR
24+
LCC
200
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
IR
三年內(nèi)
1983
只做原裝正品
詢價(jià)
IR
23+
18-pinLCC
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
24+
長期備有現(xiàn)貨
500000
行業(yè)低價(jià),代理渠道
詢價(jià)
IR
22+
LCC
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
LCC
8000
只做原裝現(xiàn)貨
詢價(jià)
更多IRFE120供應(yīng)商 更新時(shí)間2025-3-20 15:38:00