首頁 >IRFB3607GPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFB3607GPBF | High Efficiency Synchronous Rectification in SMPS | IRF International Rectifier | IRF | |
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ?ImprovedGate,AvalancheandDynamic dv/dtRuggedness ?FullyCharacterizedCapacitanceand AvalancheSOA ?EnhancedbodydiodedV/dtanddI/dt Capability Applications ?HighEfficiencySynchronousRectificationin SMPS ?UninterruptiblePowerSupply ?Hi | IRF International Rectifier | IRF | ||
ThinkiSemi85V,92AN-ChannelTrenchProcessPowerMOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply ighSpeedPowerSwitching ardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
SingleN-ChannelMOSFET Features ?AdvancedTrenchMOSTechnology ?100EASGuaranteed ?GreenDeviceAvailable ?SuperLowGateCharge Applications ?PowerTools. ?UPS ?SynchronousRectificationinSMPS. | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Benefits ?ImprovedGate,AvalancheandDynamic dv/dtRuggedness ?FullyCharacterizedCapacitanceand AvalancheSOA ?EnhancedbodydiodedV/dtanddI/dt Capability Applications ?HighEfficiencySynchronousRectificationin SMPS ?UninterruptiblePowerSupply ?Hi | IRF International Rectifier | IRF | ||
ThinkiSemi85V,92AN-ChannelTrenchProcessPowerMOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
ThinkiSemi85V,92AN-ChannelTrenchProcessPowerMOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI |
詳細參數(shù)
- 型號:
IRFB3607GPBF
- 功能描述:
MOSFET MOSFT 75V 80A 9.0mOhm 56nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
INFINEON |
1503+ |
TO-220 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
IR |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VB |
21+ |
TO-220AB |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
2022 |
TO220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
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