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IRFBA1404PPBF

AUTOMOTIVE MOSFET HEXFET? Power MOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle

IRF

International Rectifier

IRFBA1404PPBF

Advanced Process Technology

IRF

International Rectifier

IRFBA1404PPBF_15

Advanced Process Technology

IRF

International Rectifier

IRL1404

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL1404L

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404PBF

HEXFET?PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A)

IRF

International Rectifier

IRL1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1404S

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRFBA1404PPBF

  • 功能描述：

    MOSFET MOSFT 40V 206A 3.7mOhm 160nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/IR
1907+
NA
900
20年老字號,原裝優(yōu)勢長期供貨
 詢價
IR
22+
TO-273
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IR
24+
Super-220trade-3(
3526
詢價
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
INFINOEN
24+
TO-273AA
90000
一級代理進(jìn)口原裝現(xiàn)貨、假一罰十價格合理
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
INFINEON/英飛凌
2020+
NA
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
更多IRFBA1404PPBF供應(yīng)商 更新時間2025-4-12 16:20:00

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