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首頁 >IRF630BTSTU>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF630F	文件：121.75 Kbytes Page：1 Pages	N-channelmosfettransistor ?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF630FI	文件：190.54 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630FI	文件：59.11 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF630FP	文件：104.75 Kbytes Page：9 Pages	N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630FP	文件：336.19 Kbytes Page：14 Pages	N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630M	文件：343.5 Kbytes Page：9 Pages	N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630M	文件：326.69 Kbytes Page：14 Pages	N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630MFP	文件：343.5 Kbytes Page：9 Pages	N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630MFP	文件：326.69 Kbytes Page：14 Pages	N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
IRF630MFP	文件：3.1292 Mbytes Page：8 Pages	N-Channel200V(D-S)MOSFET FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
IRF630N	文件：155.06 Kbytes Page：11 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow	IRF International Rectifier	IRF
IRF630N	文件：209.86 Kbytes Page：11 Pages	N-ChannelPowerMOSFETs200V,9.3A,0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRF630N	文件：173.94 Kbytes Page：2 Pages	PowerMOSFET	TEL TRANSYS Electronics Limited	TEL
IRF630N	文件：119.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF630N	文件：240.54 Kbytes Page：11 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF630N	文件：1.58717 Mbytes Page：2 Pages	FastSwitchingSpeed DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF630N	文件：74.59 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司	NJSEMI
IRF630N	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF630NL	文件：155.06 Kbytes Page：11 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow	IRF International Rectifier	IRF
IRF630NL	文件：209.86 Kbytes Page：11 Pages	N-ChannelPowerMOSFETs200V,9.3A,0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild

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詳細參數(shù)

型號：
IRF630BTSTU
制造商：
Rochester Electronics LLC
制造商：
Fairchild Semiconductor Corporation

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	IRF630BTSTU	onsemi(安森美)	23+	-	7793	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市正邁科技有限公司	IRF630BTSTU	FSC/ON	23+	原包裝原封 □□	68000	原裝進口特價供應(yīng) QQ 1304306553 更多詳細咨詢庫存	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IRF630BTSTU	FAIRCHILD/仙童	23+		68000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市河鋒鑫科技有限公司	IRF630BTSTU_FP001	Fairchild/ON	22+	TO2203 Cropped Leads	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IRF630BTSTU_FP001	Fairchild/ON	21+	TO2203 Cropped Leads	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRF630BTSTU_FP001	Fairchild/ON	23+	TO2203 Cropped Leads	9000	原裝正品，支持實單	詢價
深圳市鵬順微電子科技有限公司	IRF630BTSTU_FP001	ON Semiconductor	2022+	TO-220-3	38550	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市安富世紀電子有限公司	IRF630B功率三極管	IR	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市威爾健半導體有限公司	IRF630B功率三極管	IR	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳廊盛科技有限公司	IRF630B功率三極管	IR	2022	TO220	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價

更多IRF630BTSTU供應(yīng)商更新時間2025-1-1 16:12:00

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