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IRF630F

N-channel mosfet transistor

?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FI

isc N-Channel MOSFET Transistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630FP

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FP

N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-Channel200V(D-S)MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF630F

  • 制造商：

    ISC

  • 制造商全稱：

    Inchange Semiconductor Company Limited

  • 功能描述：

    N-channel mosfet transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ST
24+
TO220
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
HSMC
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價(jià)
ST/意法半導(dǎo)體
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
HSMC
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
HSMC
22+
TO-220
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
HSMC
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
HSMC
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HSMC
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ST品牌
2016+
TO-220F
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
更多IRF630F供應(yīng)商 更新時(shí)間2025-3-20 11:34:00

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