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IRF430

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF430

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRF430

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF

International Rectifier

IRF430

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF430

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF430

N-CHANNEL POWER MOSFETS

FEATURES ?LowRDs(on)athighvoltage ?Improvedinductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapactiance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablitiy ?TO-3package(Highvol

SamsungSamsung semiconductor

三星三星半導體

IRF430

N-CHANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRF430

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF430

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF430-433

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFE430

HEXFETTRANSISTOR

500Volt,1.50?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpa

IRF

International Rectifier

IRFE430

SimpleDriveRequirements

IRF

International Rectifier

IRFF430

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

IRF

International Rectifier

IRFF430

2.75A,500V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF430

N??HANNELENHANCEMENT

FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS

SEME-LAB

Seme LAB

IRFF430

N-CHANNELENHANCEMENTMODEPOWERMOSFET

FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFR430A

SMPSMOSFET

IRF

International Rectifier

IRFR430A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRF430

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA

  • 功能描述：

    TRANS MOSFET N-CH 500V 4.5A 2PIN TO-204AA - Bulk

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    HEXFET, HI-REL - Bulk

  • 功能描述：

    MOSFET N TO-3

  • 功能描述：

    MOSFET, N, TO-3

  • 功能描述：

    N CH MOSFET, 500V, 4.5A, TO-204AA; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    4.5A; Drain Source Voltage

  • Vds：

    500V; On Resistance

  • Rds(on)：

    1.5ohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V ;RoHS

  • Compliant：

    No

  • 制造商：

    Int'L Rectifier

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-204AA(TO-3)
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
24+
TO-3
10000
詢價
GE
8601
20
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
MOTOROLA
05+
原廠原裝
4219
只做全新原裝真實現(xiàn)貨供應
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
HARRIS/RCA
1725+
TO-3
3256
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
新
1
全新原裝 貨期兩周
 詢價
IR
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
IR
24+
TO-3
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
更多IRF430供應商 更新時間2025-1-16 16:12:00

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