| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IIRL2203N | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-252 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-252 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-252 |
7000 |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ifm electronic |
7162+ |
con |
5 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格 |
詢價 | ||
ST意法 |
20+ |
LGA12 |
17000 |
加速度計,只做全新原裝 |
詢價 | ||
ST/意法 |
23+ |
VFLGA-12221 |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
ST |
22+ |
VFLGA-12221 |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術支持! |
詢價 | ||
ST |
17+ |
SMD |
17900 |
加速計 |
詢價 | ||
STMicroelectronics |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 |
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