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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IDT70T651S10DR	文件：344.83 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T651S10DRI	文件：344.83 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BC	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T651S10BCG	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BCG	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BCGI	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BCGI	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BCI	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T651S10BF	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T651S10BFG	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BFG	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BFG	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T651S10BFGI	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T651S10BFGI	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BFGI	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10BFI	文件：431.37 Kbytes Page：29 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T651S10DRG	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10DRG	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10DRGI	文件：266.34 Kbytes Page：28 Pages	HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T651S10DRGI	文件：739.07 Kbytes Page：28 Pages	HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT

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詳細(xì)參數(shù)

型號：
IDT70T651S10DR
功能描述：
IC SRAM 9MBIT 10NS 208QFP
RoHS：
否
類別：
集成電路(IC) >> 存儲器
系列：
-
標(biāo)準(zhǔn)包裝：
3,000
系列：
- 格式 -
存儲器：
EEPROMs - 串行
存儲器類型：
EEPROM
存儲容量：
8K(1K x 8)
速度：
400kHz
接口：
I²C，2 線串口
電源電壓：
1.7 V ~ 5.5 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
8-SOIC（0.154，3.90mm 寬）
供應(yīng)商設(shè)備封裝：
8-SOIC
包裝：
帶卷(TR)

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市毅創(chuàng)騰電子科技有限公司	IDT70T651S10DR	IDT	23+	208-PQFP(28x28)	39257	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
深圳市永貝爾科技有限公司	IDT70T651S10DR	IDT	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市興燦科技有限公司	IDT70T651S10DR	IDT	24+	208QFP	5154	原裝現(xiàn)貨	詢價
深圳市河鋒鑫科技有限公司	IDT70T651S10DR	IDT	22+	208PQFP	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IDT70T651S10DR	IDT	21+	208PQFP	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IDT70T651S10DR	IDT	23+	208PQFP	9000	原裝正品，支持實單	詢價
深圳龐田科技有限公司	IDT70T651S10DR	IDT	2023+環(huán)?，F(xiàn)貨	QFP	4425	專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢價

更多IDT70T651S10DR供應(yīng)商更新時間2024-11-20 16:30:00

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