CEC8958A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,21A,RDS(ON)=26mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. -30V,-16A,RDS(ON)=46mW@VGS=-10V. RDS(ON)=77mW@VGS=-4.5V.

CEM8958

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin

CEM8958

P-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnology

CEM8958A

DualEnhancementModeFieldEffectTransistor

FEATURES ■30V,6.8A,RDS(ON)=28m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58m?@VGS=-10V. RDS(ON)=85m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CEM8958A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM8958B

DualEnhancementModeFieldEffectTransistor(NandPChannel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CHM8958JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto

FDS8958

DualN&P-ChannelPowerTrenchMOSFET

FDS8958

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

FDS8958A

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

FDS8958A

DualN&P-ChannelPowerTrenchOMOSFET

FDS8958A

DualNandP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F

FDS8958A

DualN&P-ChannelPowerTrenchMOSFET

FDS8958B

DualN&P-ChannelPowerTrench?MOSFETQ1-N-Channel:30V,6.4A,26m廓Q2-P-Channel:-30V,-4.5A,51m廓

KDS8958

DualN&P-ChannelPowerTrenchMOSFET

L8958

Highoutputpower:1.5mW,pigtailtype

Laserdiode Highoutputpower:1.5mW,pigtailtype Features ●Highoutputpower:1.5mW ●High-speedresponse:1.25GbpsMax. ●1.3μmFP(Fabry-perot)laser Applications ●Opticalfibercommunications

NDS8958

DualN&P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo

QPB8958

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QPB8958EVB

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QPB8958SB

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)