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CEM8958A

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.8A,RDS(ON)=28m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58m?@VGS=-10V. RDS(ON)=85m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM8958A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM8958B

DualEnhancementModeFieldEffectTransistor(NandPChannel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM8958JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto

CHENMKOchenmko

力勤股份有限公司

FDS8958

DualN&P-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDS8958A

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDS8958A

DualN&P-ChannelPowerTrenchOMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958A

DualNandP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958A

DualN&P-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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