首頁 >CED04N65A>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

CED04N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF04N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP04N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU04N65

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,3.2A,RDS(ON)=2.8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU04N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CJB04N65

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJB04N65A

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJD04N65

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJD04N65

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJD04N65A

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP04N65

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJP04N65

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP04N65A

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJPF04N65

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF04N65

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
2020+
TO-251
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
CET
21+
TO-251
2357
原裝現(xiàn)貨假一賠十
 詢價(jià)
C
23+
TO-251
10000
公司只做原裝正品
 詢價(jià)
華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
C
TO-251
22+
6000
十年配單,只做原裝
 詢價(jià)
C
23+
TO-251
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET
17+
TO-251
2357
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
sino
2023+
TO-251
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET
23+
TO-251
2357
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多CED04N65A供應(yīng)商 更新時(shí)間2025-1-5 15:22:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多