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CED01N6A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEI01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1A,RDS(ON)=9.3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEK01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SR
23+
IPAK
5000
原裝正品,假一罰十
 詢價(jià)
CET
2020+
TO-251
50930
公司代理品牌,原裝現(xiàn)貨超低價(jià)清倉(cāng)!
 詢價(jià)
C
23+
IPAK
10000
公司只做原裝正品
 詢價(jià)
C
IPAK
22+
6000
十年配單,只做原裝
 詢價(jià)
C
23+
IPAK
6000
原裝正品，支持實(shí)單
 詢價(jià)
st
2023+
TO-251
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET/華瑞
22+
TO-251
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
 詢價(jià)
CET/華瑞
23+
TO-251
106599
詢價(jià)
CET/華瑞
23+
TO-251
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
更多CED01N6A供應(yīng)商 更新時(shí)間2024-10-26 15:36:00

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