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CEB6405

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-5.7A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-21A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=62mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-17A,RDS(ON)=48mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=65mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CPH6405

Ultrahigh-SpeedSwitchingApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

EN6405F

BipolarTransistor(-)50V,(-)1A,LowVCE(sat),(PNP)NPNSingleCPH3

BipolarTransistor (–)50V,(–)1A,LowVCE(sat),(PNP)NPNSingleCPH3 Features ?AdoptionofMBITprocesses ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage ?High-speedswitching ?Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.9mm)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

GTT6405

P-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTT6405usesadvancedtrenchtechnologytoprovideexcellenton-resistancewithlowgatechange. ThedeviceissuitableforuseasaloadswitchorinPWMapplications. Features *LowerGateCharge *RoHSCompliant *SmallFootprint&LowProfilePackage

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET/華瑞
23+
TO-263
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價(jià)
CET
24+
5000
詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
FAGOR
23+
INSULATEDTO-220AB
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
C
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
C
TO-263
22+
6000
十年配單,只做原裝
 詢價(jià)
C
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多CEB6405供應(yīng)商 更新時(shí)間2025-2-25 10:34:00

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