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CEB83A3

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB83A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB83A3G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP83A3G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,102A,RDS(ON)=4.5mΩ@VGS=10V. RDS(ON)=7.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEB83A3

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
TO-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
CET/華瑞
24+
TO-263
499601
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
CET
23+
TO263
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
CET
24+
TO263
571
詢價
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價
SOT263
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
CET
24+
TO-263
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
24+
TO-263
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
CET/華瑞
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
更多CEB83A3供應(yīng)商 更新時間2025-3-6 14:00:00

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