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CEB75N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

HY75N10T

100V/75AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IXFH75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH75N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH75N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH75N10Q

HIPERFETPOWERMOSFETSQCLASS

IXYS

IXYS Corporation

IXFH75N10Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM75N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM75N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT75N10Q

HIPERFETPOWERMOSFETSQCLASS

IXYS

IXYS Corporation

IXTA75N10P

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTA75N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTC75N10

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage-:VDSS=100V(Min) ?Staticdrain-sourceon-resistance:RDS(on)≤20m?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequencyswitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTC75N10

N-ChannelEnhancementMode

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH75N10

MegaMOSFET

IXYS

IXYS Corporation

IXTH75N10

MegaMOSFET

N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH75N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM75N10

MegaMOSFET

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    CEB75N10

  • 制造商:

    CET

  • 制造商全稱:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
C
23+
T0-263
10000
公司只做原裝正品
詢價(jià)
C
22+
T0-263
6000
十年配單,只做原裝
詢價(jià)
C
23+
T0-263
6000
原裝正品,支持實(shí)單
詢價(jià)
C
22+
T0-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
T0-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
CET
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
CET
24+
5000
詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
詢價(jià)
CET
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
更多CEB75N10供應(yīng)商 更新時(shí)間2024-12-27 14:30:00