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CEB6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM6426JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.7Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM6426PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT16Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM6426XPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

DNB6426

RectifierDiode

FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers

Dynex

Dynex Semiconductor

G6426-A

MagAmpToroids??G642XSeries

COILCRAFTCoilcraft lnc.

線藝美國線藝公司

G6426-A

MagAmpToroids

COILCRAFTCoilcraft lnc.

線藝美國線藝公司

IRIS-F6426S

INTEGRATEDSWITCHER

IRF

International Rectifier

LNK6426D

Energy-Efficient,AccuratePrimary-SideRegulationCV/CCSwitcherforAdaptersandChargers

DramaticallySimplifiesCV/CCConverters ?EliminatesoptocouplerandallsecondaryCV/CCcontrolcircuitry ?Eliminatesallcontrolloopcompensationcircuitry AdvancedPerformanceFeatures ?Compensatesfortransformerinductancetolerances ?Compensatesforinputlinevoltagevariations ?

POWERINTPower Integrations, Inc.

荷蘭帕沃英蒂格盛有限公司

MAX6426UK__+T

Low-Power,SC70/SOT關(guān)PResetCircuitswithCapacitor-AdjustableResetTimeoutDelay

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6426UK__-T

Low-Power,SC70/SOT關(guān)PResetCircuitswithCapacitor-AdjustableResetTimeoutDelay

GeneralDescription TheMAX6340/MAX6421–MAX6426low-powermicroprocessorsupervisorcircuitsmonitorsystemvoltagesfrom1.6Vto5V.Thesedevicesperformasinglefunction:theyassertaresetsignalwhenevertheVCCsupplyvoltagefallsbelowitsresetthreshold.Theresetoutputremainsa

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細參數(shù)

  • 型號：

    CEB6426

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價
CET
24+
5000
詢價
CET
24+
TO-263
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
24+
TO-263
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
FAGOR
23+
INSULATEDTO-220AB
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
C
23+
TO-263
10000
公司只做原裝正品
 詢價
C
TO-263
22+
6000
十年配單,只做原裝
 詢價
C
23+
TO-263
6000
原裝正品，支持實單
 詢價
CET
23+
TO-263
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多CEB6426供應(yīng)商 更新時間2025-1-14 17:02:00

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