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UPA2757GR

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2757GRisDualN-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance RDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) ?Lowgatecharge QG=10nCTYP.(VGS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2757GR

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2757GRisDualN-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance RDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) ?Lowgatecharge QG=10nCTYP.(VGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2757GR-E1-AT

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2757GRisDualN-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance RDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) ?Lowgatecharge QG=10nCTYP.(VGS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2757GR-E1-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2757GRisDualN-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance RDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) ?Lowgatecharge QG=10nCTYP.(VGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2757GR-E2-AT

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2757GRisDualN-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance RDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) ?Lowgatecharge QG=10nCTYP.(VGS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2757GR-E2-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2757GRisDualN-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance RDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) ?Lowgatecharge QG=10nCTYP.(VGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2757T

3V,SILICONMMICFREQUENCYCONVERTER

TheUPC2757TandUPC2758TareL-BandFrequencyConvertersmanufacturedusingtheNESATIIIMMICprocess.Theseproductsconsistofadoublebalancedmixer,IFamplifierandLObufferamplifier.TheUPC2757TisdesignedforlowpowerconsumptionwhiletheUPC2758Tisdesignedforlowdistortion.Bo

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2757T

SILICONMMIC1stFREQUENCYDOWN-CONVERTERFORCELLULAR/CORDLESSTELEPHONE

DESCRIPTION TheμPC8112TBisasiliconmonolithicintegratedcircuitdesignedas1stfrequencydown-converterforcellular/cordlesstelephonereceiverstage.ThisICconsistsofmixerandlocalamplifier.TheμPC8112TBfeatureshighimpedanceoutputofopencollector.SimilarICsoftheμPC2757TB

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2757TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Widebandoperation:fRFin=0.1to2.0GHz,fIFout=20to300MHz ?High-densitysurfacemounting:6-pinsuperminimoldpackage ?Lowcurrentconsumption:ICC=5.6mATYP.@mPC2757TB ICC=11mATYP.@mPC2758TB ?Supplyvoltage:VCC=2.7to3.3V ?Minimizedcarrierleaka

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2757TB

3V,SUPERMINIMOLDSIMMICDOWNCONVERTER

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    UPA2757GR

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NEC
2020+
SOP-8
69000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
RENESAS
1742+
SOP-8
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價(jià)
NEC
23+
SOP-8
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
RENESAS
20+
SOP-8
63258
原裝優(yōu)勢主營型號-可開原型號增稅票
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RENESAS/瑞薩
新年份
SOP-8
33288
原裝正品現(xiàn)貨,實(shí)單帶TP來談!
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NEC
22+
SOIC-8
25000
只有原裝原裝,支持BOM配單
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NEC
2023+
SOP-8
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
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NEC
23+
SOP-8
69000
全新原裝正品現(xiàn)貨,支持訂貨
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NEC
24+
SOP-8
5000
全新原裝正品,現(xiàn)貨銷售
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NEC
22+23+
SOP-8
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
更多UPA2757GR供應(yīng)商 更新時(shí)間2025-3-23 8:22:00

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