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UPA2791GR

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2791GR

N- and P-Channel 30 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?MotorDrive ?MobilePowerBank

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

UPA2791GR

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2791GR-E1-AT

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2791GR-E1-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2791GR-E2-AT

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2791GR-E2-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES ?Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數

  • 型號：

    UPA2791GR

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

供應商型號品牌批號封裝庫存備注價格
NEC
24+
SOP-8
502868
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
RENESAS
1742+
SOP-8
98215
只要網上有絕對有貨!只做原裝正品!
 詢價
RENESAS/瑞薩
20+
SOP-8
63258
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
RENESAS/瑞薩
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
新年份
SOP-8
33288
原裝正品現(xiàn)貨,實單帶TP來談!
 詢價
R
23+
SOIC-8
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
RENESAS/瑞薩
24+
NA/
3350
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
NEC
22+
SOIC-8
25000
只有原裝原裝,支持BOM配單
 詢價
NEC
2023+
SOP-8
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價
NEC
2402+
SOP-8
8324
原裝正品!實單價優(yōu)!
 詢價
更多UPA2791GR供應商 更新時間2025-6-7 17:06:00

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