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UPA2763

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2763isN-channelMOSFieldEffectTransistordesignedforDC/DCconverterandpowermanagementapplications. Features ?Lowon-stateresistance ?RDS(on)1=23.0mΩMAX.(VGS=10V,ID=21A) ?RDS(on)2=28.0mΩMAX.(VGS=8V,ID=21A) ?LowCiss2100pFTYP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2763T1A-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2763isN-channelMOSFieldEffectTransistordesignedforDC/DCconverterandpowermanagementapplications. Features ?Lowon-stateresistance ?RDS(on)1=23.0mΩMAX.(VGS=10V,ID=21A) ?RDS(on)2=28.0mΩMAX.(VGS=8V,ID=21A) ?LowCiss2100pFTYP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2763T1A-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2763isN-channelMOSFieldEffectTransistordesignedforDC/DCconverterandpowermanagementapplications. Features ?Lowon-stateresistance ?RDS(on)1=23.0mΩMAX.(VGS=10V,ID=21A) ?RDS(on)2=28.0mΩMAX.(VGS=8V,ID=21A) ?LowCiss2100pFTYP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763T

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2763T

3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2763T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2763TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2763TB

3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER

CEL

California Eastern Labs

UPC2763TB

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2763TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC2762TB,μPC2763TBandμPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    UPA2763

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
2020+
8HVSON
18
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
NEC
23+
8HVSON
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
22+
8-DFN3333
25000
只有原裝絕對原裝,支持BOM配單!
 詢價
NEC
23+
NA/
3268
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
RENESAS/瑞薩
22+
8-DFN3333
25000
只有原裝原裝,支持BOM配單
 詢價
NEC
23+
8HVSON
10800
只做原裝 歡迎咨詢
 詢價
RENESAS/瑞薩
2022+
DFN56
50000
原廠代理 終端免費提供樣品
 詢價
RENESA
24+
DFN5X6
22238
原裝正品現(xiàn)貨庫存假一賠十歡迎詢價
 詢價
Renesas
23+
8PowerVDFN
9000
原裝正品，支持實單
 詢價
RENESAS
1809+
DFN-8
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多UPA2763供應(yīng)商 更新時間2025-1-4 13:58:00

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