首頁(yè) >TMDXEVM6618X>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
LowOn-resistance,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule | ANADIGICS ANADIGICS, Inc | ANADIGICS | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl | STANFORD Stanford Microdevices | STANFORD | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
PowerMOSFET Description TheIRF6609combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRF International Rectifier | IRF | ||
DirectFET?PowerMOSFET? Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF | ||
IdealforCPUCoreDC-DCConverters | IRF International Rectifier | IRF | ||
IdealforCPUCoreDC-DCConverters | IRF International Rectifier | IRF | ||
DirectFET?PowerMOSFET? Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF | ||
130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
PowerWise?130MHz,1.25mARRIOOperationalAmplifiers | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
130MHz,1.25mARRIOOperationalAmplifiers | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 |
詳細(xì)參數(shù)
- 型號(hào):
TMDXEVM6618X
- 制造商:
Texas Instruments
- 功能描述:
- Boxed Product(Development Kits)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TI |
24+ |
開(kāi)發(fā)板 |
20000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
TI |
23+ |
NA |
1915 |
嵌入式MCU、DSP評(píng)估板 |
詢價(jià) | ||
TI/德州儀器 |
23+ |
8355 |
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣 |
詢價(jià) | |||
TexasInstruments |
23+ |
NA |
10021 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553 |
詢價(jià) | ||
TI |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣! |
詢價(jià) | |||
22+ |
NA |
5 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
TI/德州儀器 |
23+ |
X2SON-4 |
6000 |
原裝正品假一罰十 |
詢價(jià) | ||
TI |
23+24 |
ARM |
7665 |
主營(yíng)TI原裝原盤原標(biāo),提供BOM一站式配單 |
詢價(jià) | ||
TI |
17+ |
NOPKG |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) | ||
TEXAS INSTRUMENTS |
23+ |
NA |
9600 |
全新原裝正品!一手貨源價(jià)格優(yōu)勢(shì)! |
詢價(jià) |
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