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IRF6618中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF6618
廠商型號(hào)

IRF6618

功能描述

HEXFET Power MOSFET

文件大小

234.56 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

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數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-27 22:58:00

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IRF6618規(guī)格書(shū)詳情

Description

The IRF6618 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.

? Application Specific MOSFETs

? Ideal for CPU Core DC-DC Converters

? Low Conduction Losses

? Low Switching Losses

? Low Profile (<0.7 mm)

? Dual Sided Cooling Compatible

? Compatible with existing Surface Mount Techniques

產(chǎn)品屬性

  • 型號(hào):

    IRF6618

  • 功能描述:

    MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
2016+
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6813
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2020+
NA
80000
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04+
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2145
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2023+
MG-WDSON-5
6000
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24+
PLL
20000
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06+
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一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
Infineon/英飛凌
21+
MG-WDSON-5
6820
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23+
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7750
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詢價(jià)
IR
1802+
QFN
6528
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
詢價(jià)
IR
ROHS
13352
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)