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A6618

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

A6618E5R

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

A6618E5VR

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AP6618GM-HF

LowOn-resistance,FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AWU6618

HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule

ANADIGICS

ANADIGICS, Inc

CGA-6618

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

CGA-6618

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZA

SIRENZA MICRODEVICES

CGA-6618

DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER

ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl

STANFORD

Stanford Microdevices

CGA-6618Z

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

CGA-6618Z

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZA

SIRENZA MICRODEVICES

GSC6618

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

HM6618A

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM6618B

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRF6618

PowerMOSFET

Description TheIRF6609combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRF

International Rectifier

IRF6618

HEXFETPowerMOSFET

Description TheIRF6618combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRF

International Rectifier

IRF6618PBF

DirectFET?PowerMOSFET?

Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6618PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6618TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6618TRPBF

DirectFET?PowerMOSFET?

Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

LMH6618

130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    A6618

  • 制造商:

    Pentair Technical Products/Hoffman

  • 功能描述:

    6x6x18 3R Wire Trough

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24+
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23
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10+
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7800
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ALLEGRO
23+
PLCC44
1580
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ALLEGRO
22+
PLCC
3600
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ALLEGRO
2022
PLCC
2058
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24+
PLCC44P
6980
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ALLERGO
2339+
PLCC-44
5650
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
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ALLEGRO
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1080
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ALLEGRO
2021+
PLCC44
6702
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ALLEGRO
22+
PLCC44
8200
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更多A6618供應(yīng)商 更新時(shí)間2024-10-25 16:30:00