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首頁 >STP1N120>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STP1N120	文件：136.31 Kbytes Page：10 Pages	channel 1200V - 30廓 - 500mA - TO-220 Zener - protected SuperMESH??Power MOSFET Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
1N120	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
HGTD1N120BNS	文件：312.88 Kbytes Page：2 Pages	TrenchField-StopTechnologyIGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
HGTD1N120BNS	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTD1N120BNS	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTD1N120BNS	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	Intersil Intersil Corporation	Intersil
HGTD1N120CNS	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
HGTP1N120BN	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP1N120BN	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	Intersil Intersil Corporation	Intersil
HGTP1N120BN	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP1N120BND	文件：75.75 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
HGTP1N120CN	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
HGTP1N120CND	文件：80.17 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
IXTA1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Corporation	IXYS
IXTA1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?	IXYS IXYS Corporation	IXYS
IXTP1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Corporation	IXYS
IXTP1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?	IXYS IXYS Corporation	IXYS
IXTY1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Corporation	IXYS
IXTY1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?	IXYS IXYS Corporation	IXYS
UG1N120	文件：290.58 Kbytes Page：3 Pages	1200VNPTSERIESN-CHANNELIGBT	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC

詳細(xì)參數(shù)

型號(hào)：
STP1N120
制造商：
STMicroelectronics

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	STP1N120	ST/意法	17+	TO220ABNONISOL	31518	原裝正品可含稅交易	詢價(jià)
深圳市昌和盛利電子有限公司	STP1N120	ST	23+	TO-220	8795		詢價(jià)
深圳市一線半導(dǎo)體有限公司	STP1N120	ST	24+	TO220ABNONISOL	8866		詢價(jià)
深圳市勤思達(dá)科技有限公司	STP1N120	ST	2015+	TO220A	12500	全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	STP1N120	ST	1726+	TO-220	6528	只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	STP1N120	ST/意法	23+	TO220ABNONISOL	10000	公司只做原裝正品	詢價(jià)
深圳市能創(chuàng)芯電子科技有限公司	STP1N120	ST	23+	TO-220	3000	原裝正品假一罰百!可開增票!	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	STP1N120	ST		TO-220	93480	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市中飛芯源科技有限公司	STP1N120	ST	23+	TO-220	6000	原裝,可配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	STP1N120	ST	22+	TO220ABNONISOL	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)

更多STP1N120供應(yīng)商更新時(shí)間2024-11-17 14:00:00

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