91精品免费久久久,日韩黄色高清视频

首頁 >IXTY1N120P>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXTY1N120P	文件：130.84 Kbytes Page：4 Pages	N-Channel Enhancement Mode Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?	IXYS IXYS Corporation	IXYS
IXTY1N120P	文件：315.25 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET	IXYS IXYS Corporation	IXYS
IXTY1N120P	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 單個(gè) 描述：MOSFET N-CH 1200V 1A TO252	IXYS IXYS Corporation	IXYS
IXTY1N120P_V01	文件：315.25 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET	IXYS IXYS Corporation	IXYS
1N120	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
HGTD1N120BNS	文件：312.88 Kbytes Page：2 Pages	TrenchField-StopTechnologyIGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
HGTD1N120BNS	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTD1N120BNS	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTD1N120BNS	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	Intersil Intersil Corporation	Intersil
HGTD1N120CNS	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
HGTP1N120BN	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP1N120BN	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	Intersil Intersil Corporation	Intersil
HGTP1N120BN	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP1N120BND	文件：75.75 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
HGTP1N120CN	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
HGTP1N120CND	文件：80.17 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	Intersil Intersil Corporation	Intersil
IXTA1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?	IXYS IXYS Corporation	IXYS
IXTA1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Corporation	IXYS
IXTP1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Corporation	IXYS
IXTP1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?	IXYS IXYS Corporation	IXYS

12 >>>

產(chǎn)品屬性

產(chǎn)品編號(hào)：
IXTY1N120P
制造商：
IXYS
類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)
系列：
Polar
包裝：
卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶
FET 類型：
N 通道
技術(shù)：
MOSFET（金屬氧化物）
25°C 時(shí)電流 - 連續(xù)漏極 (Id)：
1A（Tc）
安裝類型：
表面貼裝型
供應(yīng)商器件封裝：
TO-252AA
封裝/外殼：
TO-252-3，DPak（2 引線 + 接片），SC-63
描述：
MOSFET N-CH 1200V 1A TO252

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市科恒偉業(yè)電子有限公司	IXTY1N120P	IXYS	2018+	TO252	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心	詢價(jià)
深圳市華來深電子有限公司	IXTY1N120P	IXYS	23+	TO-252	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市華斯頓科技有限公司	IXTY1N120P	IXYS	22+23+	TO252	75986	絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市艾宇欣科技有限公司	IXTY1N120P	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳市科雨電子有限公司	IXTY1N120P	IXYS	1809+	TO-252	1675	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	IXTY1N120P	IXYS/艾賽斯	23+	TO-252	10000	公司只做原裝正品	詢價(jià)
深圳市易訊博科技有限公司	IXTY1N120P	IXYS	22+	NA	18	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市河鋒鑫科技有限公司	IXTY1N120P	IXYS	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IXTY1N120P	IXYS	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原裝,支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IXTY1N120P	IXYS/艾賽斯	23+	TO-252	6000	原裝正品，支持實(shí)單	詢價(jià)

更多IXTY1N120P供應(yīng)商更新時(shí)間2024-11-16 16:11:00

產(chǎn)品屬性

相關(guān)規(guī)格書

相關(guān)庫存