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IXTA1N120P

N-Channel Enhancement Mode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTA1N120P

N-Channel Enhancement Mode Power MOSFET

IXYS

IXYS Corporation

1N120

GOLDBONDEDDIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

ETCList of Unclassifed Manufacturers

未分類制造商

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTD1N120BNS

TrenchField-StopTechnologyIGBT

DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTD1N120CNS

6.2A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號：

    IXTA1N120P

  • 功能描述：

    MOSFET 1 Amps 1200V 20 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-263AA
30000
晶體管-分立半導體產品-原裝正品
 詢價
IXYS
24+
TO-263
8866
詢價
IXYS
23+
TO-263-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
AME
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-263
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
 詢價
更多IXTA1N120P供應商 更新時間2025-2-21 18:53:00

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