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STB13N60M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF13N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFH13N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFI13N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFU13N60M2

N-channel600V,0.35typ.,11AMDmeshTMM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?LowerRDS(on)xareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimproved

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STL13N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP13N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STP13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STU13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STB13N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    POWER MOSFET - Tape and Reel

  • 功能描述：

    Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R

  • 功能描述：

    MOSFET N-CH 600V 11A D2PAK

  • 功能描述：

    STB13N60M2 Series N-Channel 650 V 0.38 Ohm MDmesh II Plus Power Mosfet - D2PAK

  • 功能描述：

    N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package

供應商型號品牌批號封裝庫存備注價格
ST
15+
TO263
4000
原廠原裝,本地現(xiàn)貨庫存,假一罰十!
 詢價
ST
23+
TO263
6996
只做原裝正品現(xiàn)貨
 詢價
ST(意法半導體)
23+
TO-263-2
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
ST
24+
TO263
2000
原裝原廠代理 可免費送樣品
 詢價
ST/意法半導體
22+
TO-263-3
6000
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST
23+
TO263
35680
只做進口原裝QQ:373621633
 詢價
ST/意法半導體
2023
TO-263-3
6000
公司原裝現(xiàn)貨/支持實單
 詢價
ST(意法半導體)
23+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
STMicroelectronics
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
更多STB13N60M2供應商 更新時間2020-6-4 9:34:00

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