首頁 >STB24NM65N>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STB24NM65N | N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS | |
STB24NM65N | isc N-Channel MOSFET Transistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=19A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandr | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS |
詳細參數
- 型號:
STB24NM65N
- 功能描述:
MOSFET N-Channel 650V 0.16 Ohms 19A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO262 |
6996 |
只做原裝正品現貨 |
詢價 | ||
ST |
17+ |
TO-263 |
6200 |
100%原裝正品現貨 |
詢價 | ||
STMicro. |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
ST |
16+ |
08+ |
2 |
原裝現貨假一罰十 |
詢價 | ||
ST |
24+ |
TO-263 |
7500 |
詢價 | |||
STMicroelectronics |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
ST |
2018+ |
TO-263 |
11256 |
只做進口原裝正品!假一賠十! |
詢價 | ||
STMICROEL |
23+ |
NA |
41486 |
專做原裝正品,假一罰百! |
詢價 | ||
ST |
22+23+ |
TO-263 |
19817 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
ST |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
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