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首頁 >SIHFP21N60L>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
SIHFP21N60L	文件：162.12 Kbytes Page：8 Pages	Power MOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFP21N60L	文件：444.96 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
SIHFP21N60L-E3	文件：162.12 Kbytes Page：8 Pages	Power MOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
21N60	文件：49.85 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
HMS21N60	文件：1.06048 Mbytes Page：8 Pages	N-ChannelSuperJunctionPowerMOSFETII	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HMS21N60F	文件：1.06048 Mbytes Page：8 Pages	N-ChannelSuperJunctionPowerMOSFETII	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
IRFP21N60L	文件：237.92 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimpledrive requirement ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategorizati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP21N60L	文件：197.26 Kbytes Page：9 Pages	SMPSMOSFET FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero	IRF International Rectifier	IRF
IRFP21N60L	文件：162.12 Kbytes Page：8 Pages	PowerMOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP21N60L	文件：444.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.32?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFP21N60LPBF	文件：162.12 Kbytes Page：8 Pages	PowerMOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP21N60LPBF	文件：234.53 Kbytes Page：9 Pages	SMPSMOSFET FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero	IRF International Rectifier	IRF
IRFR21N60L	文件：163.43 Kbytes Page：9 Pages	SMPSMOSFET	IRF International Rectifier	IRF
IXFH21N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM21N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFZ21N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
MGP21N60E	文件：123.26 Kbytes Page：5 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MGP21N60E	文件：127.77 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MGW21N60ED	文件：152.75 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MGW21N60ED	文件：152.61 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI

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詳細(xì)參數(shù)

型號：
SIHFP21N60L
制造商：
VISHAY
制造商全稱：
Vishay Siliconix
功能描述：
Power MOSFET

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	SiHFP21N60L	VISHAY/威世	2022+	TO-247	50000	原廠代理終端免費(fèi)提供樣品	詢價(jià)
深圳市維爾達(dá)電子有限公司	SiHFP21N60L	ixys	2023+	TO-247	80000	一級代理/分銷渠道價(jià)格優(yōu)勢十年芯程一路只做原裝正品	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	SIHFP21N60L	VISHAY/威世	2022+	TO-247	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	SiHFP22N50A	V	23+	TO-247	10000	公司只做原裝正品	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	SiHFP22N60K	VISHAY/威世	23+	TO-247	11200	原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO	詢價(jià)
深圳市鵬和科技有限公司	SIHFP240	V	24+	TO-247	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市宏捷佳電子科技有限公司	SiHFP244	Vishay	24+	TO-247	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)

更多SIHFP21N60L供應(yīng)商更新時(shí)間2024-12-28 14:00:00

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