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IRFP21N60L

SMPS MOSFET

FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero

IRF

International Rectifier

IRFP21N60L

Power MOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60L

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.32?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP21N60L

Power MOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimpledrive requirement ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategorizati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60L_V01

Power MOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimpledrive requirement ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategorizati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60LPBF

SMPS MOSFET

FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero

IRF

International Rectifier

IRFP21N60LPBF

Power MOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR21N60L

SMPSMOSFET

IRF

International Rectifier

IXFH21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFZ21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

MGP21N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP21N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW21N60ED

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW21N60ED

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SIHA21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHA21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號:

    IRFP21N60L

  • 功能描述:

    MOSFET N-Chan 600V 21 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-247AC
8866
詢價
IR
23+
TO247
12335
詢價
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價
IR
24+
原廠封裝
65
原裝現(xiàn)貨假一罰十
詢價
IR
23+
TO-3P
5000
原裝正品,假一罰十
詢價
IR
23+
TO-247AC
8600
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
22+23+
TO247
35295
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
IR
18+
TO-247
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
IR
23+
TO247
65480
詢價
更多IRFP21N60L供應(yīng)商 更新時間2025-1-15 16:30:00