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MGP21N60E

Insulated Gate Bipolar Transistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGP21N60E

Insulated Gate Bipolar Transistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGW21N60ED

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW21N60ED

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha

ONSEMION Semiconductor

安森美半導體安森美半導體公司

SIHA21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHA21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHA21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半導體

SIHB21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHB21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHB21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHFP21N60L

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導體

SIHFP21N60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHG21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHG21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHH21N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半導體

SIHH21N60EF

ESeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHP21N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半導體

SIHP21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHP21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    MGP21N60E

  • 制造商:

    ONSEMI

  • 制造商全稱:

    ON Semiconductor

  • 功能描述:

    Insulated Gate Bipolar Transistor

供應商型號品牌批號封裝庫存備注價格
ON
24+
90000
詢價
ON/安森美
23+
TO
10000
公司只做原裝正品
詢價
ON/安森美
22+
TO
6000
十年配單,只做原裝
詢價
ON/安森美
22+
TO
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
ON/安森美
22+
TO
96933
詢價
ON
24+
TO
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
TYCO
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
TYCO/泰科
21+
SMD
10000
詢價
TYCO/泰科
22+
SMD
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
詢價
TYCO
22+
SMD
10000
現(xiàn)貨,原廠原裝假一罰十!
詢價
更多MGP21N60E供應商 更新時間2024-12-28 15:30:00