MGP21N60E中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書
MGP21N60E規(guī)格書詳情
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 65 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V
? Low On–Voltage 2.15 V typical at 20 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號(hào)：
MGP21N60E
- 制造商：
ONSEMI
- 制造商全稱：
ON Semiconductor
- 功能描述：
Insulated Gate Bipolar Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TYCO/泰科 |
24+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
SIEMENS |
23+ |
SOP |
12735 |
詢價(jià) | |||
SIEMENS |
2023+ |
SOP14 |
3587 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
MGP |
2407+ |
SOP |
7750 |
原裝現(xiàn)貨!實(shí)單直說!特價(jià)! |
詢價(jià) | ||
SIEMENS/西門子 |
21+ |
SOP |
7540 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
TYCO/泰科 |
22+ |
SMD |
71738 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
SIEMENS/西門子 |
23+ |
SOP14 |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
ON |
24+ |
90000 |
詢價(jià) | ||||
SIEMENS/西門子 |
22+ |
SOP14 |
14008 |
原裝正品 |
詢價(jià) | ||
TYCO/泰科 |
22+ |
SMD |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) |
