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RFD3055SM中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

RFD3055SM
廠商型號(hào)

RFD3055SM

功能描述

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

文件大小

82.17 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 22:50:00

RFD3055SM規(guī)格書詳情

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA49082.

Features

? 12A, 60V

? rDS(ON) = 0.150?

? Temperature Compensating PSPICE? Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175oC Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    RFD3055SM

  • 功能描述:

    MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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