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NVBG160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondl

ONSEMION Semiconductor

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NVBG160N120SC1

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L

ONSEMION Semiconductor

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NVBG160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondl

ONSEMION Semiconductor

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NTBG160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

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NTBG160N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

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NTBG160N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,160m,19.5A

ONSEMION Semiconductor

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NTC160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,BareDie

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

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NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

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NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

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NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos

ONSEMION Semiconductor

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NTHL160N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,160m,17A

ONSEMION Semiconductor

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NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost

ONSEMION Semiconductor

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NVHL160N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,160m,17A

ONSEMION Semiconductor

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供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
D2PAK7 (TO-263-7L HV)
100000
全新原裝
詢價
ON
24+
TO-263-7L
572300
只做原裝正品,假一罰十!
詢價
onsemi
24+
D2PAK-7
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
onsemi(安森美)
23+
TO-263-7
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
ON(安森美)
23+
12859
公司只做原裝正品,假一賠十
詢價
ON(安森美)
6000
詢價
ON(安森美)
22+
NA
8000
原廠原裝現(xiàn)貨
詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
8000
正規(guī)渠道,只有原裝!
詢價
onsemi
23+
D2PAK-7L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
5000
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品
詢價
更多NVBG160N120SC1供應(yīng)商 更新時間2024-9-7 8:59:00