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NTC160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, Bare Die

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG160N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG160N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,160m,19.5A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL160N120SC1

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL160N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,160m,17A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG160N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL160N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,160m,17A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
AAC
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
VATRONICS
22+
SMD
38000
原裝現(xiàn)貨樣品可售
 詢價(jià)
16
2
0.47
10000
全新原裝現(xiàn)貨 樣品可售
 詢價(jià)
風(fēng)華高科
23+
NA
200
NTC熱敏電阻
 詢價(jià)
ROHS
8560
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
 詢價(jià)
N/A
24+
ROHS
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
RUILON(瑞隆源)
23+
插件,P=7.5mm
925
專做感器/百分百原裝現(xiàn)貨
 詢價(jià)
NTC
23+
38000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
NTC
2110+
SOT-23
240000
NTC NTC16D-20 SOT-23 2110+
 詢價(jià)
更多NTC160N120SC1供應(yīng)商 更新時(shí)間2024-11-12 15:00:00

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