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首頁(yè) >NTHL160N120SC1>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NTHL160N120SC1	文件：303.4 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL160N120SC1	文件：306.25 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL160N120SC1	文件：308.69 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL160N120SC1	文件：304.71 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL160N120SC1	文件：236.88 Kbytes Page：7 Pages	MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL160N120SC1_V01	文件：306.25 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTHL160N120SC1_V02	文件：308.69 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG160N120SC1	文件：245.01 Kbytes Page：8 Pages	MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,160m,19.5A	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG160N120SC1	文件：325.82 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTBG160N120SC1	文件：329.24 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NTC160N120SC1	文件：171.69 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVBG160N120SC1	文件：327.55 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(typ.QG(tot)=33.8nC) ?LowEffectiveOutputCapacitance(typ.Coss=50.7pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondl	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVBG160N120SC1	文件：244.91 Kbytes Page：8 Pages	MOSFET??SiCPower,SingleN-Channel,D2PAK-7L	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVHL160N120SC1	文件：240.77 Kbytes Page：7 Pages	MOSFET-SiCPower,SingleN-Channel1200V,160m,17A	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市宇爍芯半導(dǎo)體科技有限公司	NTHL160N120SC1	ON	23+	TO-247-3LD	100000	全新原裝	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	NTHL160N120SC1	onsemi	24+	TO-247-3	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市高捷芯城科技有限公司	NTHL160N120SC1	onsemi(安森美)	23+	TO-247	7814	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市芯球通科技有限公司	NTHL160N120SC1	ON(安森美)	23+	TO-247	11402	公司只做原裝正品,假一賠十	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	NTHL160N120SC1	ON	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市達(dá)恩科技有限公司	NTHL160N120SC1	ON	21+	NA	3000	進(jìn)口原裝假一罰十現(xiàn)貨	詢價(jià)
深圳市振鑫微電子科技有限公司	NTHL160N120SC1	ON(安森美)	23+	N/A	589610	新到現(xiàn)貨原廠一手貨源價(jià)格秒殺代理!	詢價(jià)
深圳市吉銀科技有限公司	NTHL160N120SC1	ON(安森美)			6000		詢價(jià)
深圳市盈盛科創(chuàng)科技有限公司	NTHL160N120SC1	ON	21+	NA	3000	進(jìn)口原裝假一罰十現(xiàn)貨	詢價(jià)
中科國(guó)際電子(深圳)有限公司	NTHL160N120SC1	ON(安森美)	22+	NA	8000	原廠原裝現(xiàn)貨	詢價(jià)

更多NTHL160N120SC1供應(yīng)商更新時(shí)間2024-9-7 8:59:00

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