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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NVB60N06	文件：216.05 Kbytes Page：10 Pages	MOSFET – Power, N-Channel, D2PAK 60 V, 60 A Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVB60N06T4G	文件：216.05 Kbytes Page：10 Pages	MOSFET – Power, N-Channel, D2PAK 60 V, 60 A Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NVB60N06T4G	文件：165.22 Kbytes Page：9 Pages	Power MOSFET 60 V, 60 A, N??hannel D2PAK	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
OM60N06SA	文件：215.37 Kbytes Page：6 Pages	LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr	IRF International Rectifier	IRF
P60N06	文件：347.24 Kbytes Page：10 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PHB60N06LT	文件：344.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
PHB60N06LT	文件：71.01 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB60N06T	文件：68.52 Kbytes Page：8 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB60N06T	文件：345.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
PHP60N06LT	文件：371.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
PHP60N06LT	文件：71.01 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHP60N06T	文件：64.319 Kbytes Page：8 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PJD60N06	文件：385.14 Kbytes Page：8 Pages	60VN-ChannelEnhancementModeMOSFET	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
PJD60N06A	文件：409.71 Kbytes Page：8 Pages	60VN-ChannelEnhancementModeMOSFET	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
PJD60N06SA-AU	文件：485.24 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
RFP60N06	文件：412.33 Kbytes Page：8 Pages	50A,60V,0.022Ohm,LogicLevelN-ChannelPowerMOSFETs TheseN-ChannelenhancementmodepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil
SQM60N06	文件：197.52 Kbytes Page：11 Pages	AutomotiveN-Channel60V(D-S)175?CMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SSP60N06	文件：268.24 Kbytes Page：5 Pages	NCHANNELPOWERMOSFETS	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
STP60N06	文件：347.24 Kbytes Page：10 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP60N06FI	文件：347.24 Kbytes Page：10 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市華來(lái)深電子有限公司	NVB60N06T4G	ON	23+	TO-263	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市維爾達(dá)電子有限公司	NVB60N06T4G	ON	2023+	D2PAK-3	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	NVB60N06T4G	NEXPERIA/安世	23+		69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
深圳市科雨電子有限公司	NVB60N06T4G	ON	1809+	TO-263	1675	就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!	詢價(jià)
深圳市正納電子有限公司	NVB60N06T4G	ON(安森美)	23+	NA	20094	正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	NVB60N06T4G	O	23+	D2PAK	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	NVB60N06T4G	ON Semiconductor	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	NVB60N06T4G	O	23+	D2PAK	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市鵬順微電子科技有限公司	NVB60N06T4G	ON Semiconductor	2022+	TO-263-3,D2Pak(2 引線 + 接片	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市晨豪科技有限公司	NVB60N06T4G	ON/安森美	23+	TO-263-3	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)

更多NVB60N06供應(yīng)商更新時(shí)間2025-1-13 14:04:00

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