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NP80N04DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04DHE-S12-AYNote1,

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04KHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NP80N04DHE

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 80A I(D) | TO-262AA

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
8866
詢價
NEC
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
NEC
6000
面議
19
TO-262
 詢價
NEC
22+
TO-262
6000
十年配單,只做原裝
 詢價
NEC
23+
TO-262
6000
原裝正品，支持實單
 詢價
NEC
22+
TO-262
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
21+
SOT-263
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
24+
TO-263
3750
原裝現(xiàn)貨假一賠十
 詢價
NEC
23+
NA/
2500
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
更多NP80N04DHE供應商 更新時間2025-3-27 13:30:00

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