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NP80N055PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N055MDG,NP80N055NDG,andNP80N055PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N055MDG,NP80N055NDG RDS(on)1=6.9mΩMAX.(VGS=10V,ID=40A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG-E1B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N055MDG,NP80N055NDG,andNP80N055PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N055MDG,NP80N055NDG RDS(on)1=6.9mΩMAX.(VGS=10V,ID=40A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG-E2B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N055MDG,NP80N055NDG,andNP80N055PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N055MDG,NP80N055NDG RDS(on)1=6.9mΩMAX.(VGS=10V,ID=40A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG-E1B-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG-E2B-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

80N055

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP80N055PDG

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
 詢價
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
NEC
22+
TO-263
6000
十年配單,只做原裝
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實單
 詢價
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
NEC
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-263
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
NEC
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多NP80N055PDG供應(yīng)商 更新時間2025-3-29 18:02:00

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